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The constitution of nitrided oxides and reoxidized nitrided oxides on silicon

机译:氮化氧化物和再氧化氮化氧化物在硅上的构成

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Chemical analysis has been made of 361‐A˚ thermal oxide films nitrided in ammonia and also subsequently reoxidized in oxygen at 1000 °C, using techniques of ellipsometry and infrared spectrometry. The nitrided film is shown to have a three‐layer structure consisting of 22 A˚ of 48 nitrogen, 334 A˚ of 17 nitrogen, and 7.4 A˚ of 100 nitrogen, where the fractions refer to N/(N+O). After oxidation, the interface layer was unchanged and the surface merged into the bulk, the nitrogen content of which was reduced to 11. The void content has also been determined.
机译:使用椭偏仪和红外光谱法技术,对在氨中氮化并随后在1000°C的氧气中再氧化的361&连字符A&环热氧化膜进行了化学分析。氮化膜具有三层结构,由22个A&环;48%氮,334个A&环的17%氮和7.4个A&环的100%氮组成,其中馏分是指% N/(N+O)。氧化后界面层不变,表面合并成块体,其氮含量降低到11%。空隙含量也已确定。

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