Study of radiative recombination efficiency in 28ndash;180hyphen;Aring;hyphen;wide AlGaAs/GaAs quantum wells grown by molecular beam epitaxy

摘要

The paper reports a theoretical and experimental study of the dependence of the radiative recombination efficiency (eegr;i) on the GaAs quantum well width (Lz) in AlGaAs/GaAs quantum well structures with binary/binary superlattice confinement. Values of eegr;igsim;60percnt; at room temperature have been obtained for quantum wells withLzge;40 Aring;. It is shown that structures withLz40 Aring; exhibit a sharp decrease in eegr;iassociated with nonradiative recombination of the high energy part of nonequilibrium carriers in the confining layers even in the presence of comparatively high potential barriers for Ggr; electrons.