Low resistance nonalloyed ohmic contacts ofe‐gun evaporated Pt/Ti to S dopedn‐InP 5×1017, 1×1018, and 5×1018cm−3have been fabricated by rapid thermal processing. The contacts to the lower doped substrates (5×1017and 1×1018cm−3) were rectifying as‐deposited as well as after heat treatment at temperatures lower than 350 °C. Higher processing temperatures stimulated the Schottky to ohmic contact conversion with minimum specific contact resistance of 1.5×10−5and 5×10−6OHgr; cm2, respectively, as a result of rapid thermal processing at 450 °C for 30 s. Heating at a temperature of 550 °C again yielded a Schottky contact. The contact to the 5×1018cm−3InP was ohmic as deposited with a specific contact resistance value of 1.1×10−4OHgr; cm2. Supplying heat treatment to the contact caused a decrease of the specific contact resistance to a minimum of 8×10−7OHgr; cm2as a result of rapid thermal processing at 450 °C for 30 s. In all cases, this heat treatment caused a limited interfacial reactions between the Ti and the InP, and resulted in an almost abrupt interface. Heating at temperatures higher than 500 °C resulted in an interfacial intermixing and a mutual migration and reaction of the Ti and the semiconductor elements. The Pt/Ti bilayer structure was highly tensile as deposited (5×109dyn cm−2) and became stress‐free as a result of the interfacial reactions which took place while heating the samples to temperature of 400 °C or higher.
展开▼
机译：通过快速热处理制备了低电阻非合金欧姆触头，包括喷枪蒸发Pt/Ti到S掺杂的InP 5×1017、1×1018和5×1018cm−3。与下掺杂基体（5×1017和1×1018cm−3）的接触在低于350 °C的温度下进行整流，并经过热处理。 由于在450 °C下快速热处理30 s，较高的加工温度刺激了肖特基到欧姆接触的转换，最小比接触电阻分别为1.5×10−5和5×10−6&OHgr; cm2。在550°C的温度下加热再次产生肖特基接触。与5×1018cm−3InP的接触是欧姆的，比接触电阻值为1.1×10−4&OHgr; cm2。由于在450°C下快速热处理30 s，对触点进行热处理导致比接触电阻降低到最小值×10−7&OHgr; cm2。在所有情况下，这种热处理都会导致 Ti 和 InP 之间的界面反应有限，并导致几乎突然的界面。在高于 500 °C 的温度下加热会导致界面混合以及 Ti 和半导体元件的相互迁移和反应。Pt/Ti双层结构在沉积时具有高度的拉伸性（5×109dyn cm−2），并且由于将样品加热到400°C或更高的温度时发生的界面反应而变得无应力。
展开▼
