An antimonyhyphen;related electronic level in isovalently doped bulk GaAs

摘要

Temperaturehyphen;dependent Hallhyphen;effect and photoluminescence measurements have been performed on a series of antimonyhyphen;doped bulk GaAs samples that were otherwise undoped. A new donor level located 0.48 eV below the conductionhyphen;band edge has been detected by both experiments in all antimonyhyphen;doped samples studied. This level reduces the resistivity of antimonyhyphen;doped material below the semihyphen;insulating limit. Comparison with known intrinsic levels in undoped material have been made and it is shown that the 0.48hyphen;eV donor is distinct from any of these. It is concluded that the defect responsible for the 0.48hyphen;eV donor involves an impurity antisite SbGaeither isolated or in a complex with intrinsic defects.