Schottkyhyphen;barrier profiling techniques in semiconductors: Gate current and parasitic resistance effects

摘要

The theory for obtaining mobility and carrier concentration profiles by the Hallhyphen;effect, magnetoresistance, and capacitancehyphen;conductance methods is developed in the relaxationhyphen;time approximation. This theory is then applied to semiconductors in which a Schottky barrier is used to control a depletion region. Particular emphasis is given to fieldhyphen;effect transistor structures which are ideally suited for geometric magnetoresistance measurements. A unique feature of the present model is the correction for finite gate (Schottkyhyphen;barrier) current, which can be very important under forwardhyphen;gatehyphen;bias conditions. The ability to use forwardhyphen;bias makes the nearhyphen;surface region more accessible. Also, parasitic resistance effects are treated. We apply these results to GaAs conducting layers formed by direct implantation of 4times;1012/cm2, 100hyphen;keV Si ions into Crhyphen;doped GaAs.