The recombination dynamics of optical transitions as well as strain effects in AlInGaN/In_(0.08)Ga_(0.92)N quantum wells (QWs) were studied. QW emission energy, photoluminescence decay behavior, photoluminescence emission line shape, and nonradiative recombination behavior were found to be strong functions of strain as well as localization. The degree of carrier localization was inferred by modeling several aspects of optical behavior obtained from variable temperature time-resolved photoluminescence experiments. According to the modeling results, the degree of localization was found to be a minimum for unstrained QWs and increased as either tensile or compressive strain increased, indicating that InGaN QW microstructure is a function of the lattice-mismatch-induced strain experienced during deposition.
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