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Valence‐band effective masses of GaAs

机译:化合价连字符;砷化镓的带有效质量数

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摘要

The density‐of‐states effective masses for the heavy‐hole, light‐hole, and split‐off valence bands of GaAs have been calculated as a function of energy for each band. The calculations are based on a fullk⋅ptheory with the most recent values used for the matrix elements. Provision has been made for the effect of the split‐off energy on the matrix elements of the split‐off band. The results show important nonparabolicities which should be taken into account in modeling the valence band, and rational polynomial fits have been made for ease of computation.
机译:砷化镓的重空穴、光空穴和分裂连字符价带的密度&连字符状态有效质量已计算为每个能带的能量函数。计算基于 fullk⋅ptheory,其最新值用于矩阵元素。已经规定了分裂&连字符;关闭能量对分裂&连字符;关闭带的基质元素的影响。结果表明,在价带建模时应考虑重要的非拟合性,并且为了便于计算,已经进行了有理多项式拟合。

著录项

  • 来源
    《journal of applied physics》 |1988年第1期|447-450|共页
  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
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