Electronic properties of multiple Si dgr; doping in GaAs

摘要

The subband structure of multiple Si dgr;hyphen;doped layers in GaAs is calculated within the localhyphen;densityhyphen;functional approximation for several doping periods. The diffusion effect of donors impurities are investigated. The physical properties of the present multiple dgr; doping depend strongly on the period length, reflecting a transition from quantum well to superlattice.