Damage introduction by implantation of Be and Si into InSb, and its removal by rapid thermal annealing in the range 300–400 °C for 20 s was investigated by Rutherford backscattering and transmission electron microscopy. There is good recovery of the lattice upon annealing at 450 °C provided the InSb was not amorphized during the implantation step. At the same time, there is limited redistribution of Be for these annealing conditions, but for Si there is marked diffusion even during a nominal room‐temperature implant. Lowering the sample temperature to 77 K during the implant stops this redistribution, with a near‐Gaussian ion distribution resulting. The activation of Be is of the order of 50 over the dose range 1013–1015cm−2. In most cases there is a marked similarity in implant properties of InSb to those of GaSb.
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机译：通过卢瑟福背向散射和透射电子显微镜研究了将 Be 和 Si 注入 InSb 的损伤引入，以及在 300–400 °C 范围内快速热退火 20 s 的去除。在450°C退火时晶格有良好的回收率，前提是InSb在注入步骤中没有非晶化。同时，在这些退火条件下，Be的再分布有限，但对于Si，即使在标称室温植入期间，也会有明显的扩散。在植入过程中将样品温度降低到 77 K 会阻止这种重新分布，从而产生近高斯离子分布。在1013-1015cm-2的剂量范围内，Be的活化量级为50%。在大多数情况下，铟锑的植入物特性与砷化镓的植入物特性有明显的相似性。
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