A PbTe flux has been used fornhyphen;type (Te) doping of GaAs, GaSb, and AlGaSb. The effects of surface accumulation and Te desorption were noticeable in secondaryhyphen;ion mass spectroscopy profiles of GaAs layers grown at temperatures in excess of 540thinsp;deg;C. Te accumulation was not apparent in GaSb layers grown at temperatures up to 630thinsp;deg;C, but Te desorption occurred from GaSb at temperatures above 540thinsp;deg;C. The donor ionization energy of Te in AlxGa1minus;xSb is 44 meV for 0.4X0.5, i.e., significantly lower than the ionization energies of S or Se in similar material.
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