A novel method of the selective epitaxy of InP was developed by employing a two‐step growth in atmospheric pressure metalorganic chemical vapor deposition. By this method, selective epitaxy, without ridge and/or lateral growth, and with uniform deposition of the polycrystalline layer on the SiO2mask, could be achieved. First, a thin uniform InP polycrystalline layer was deposited on a SiO2/InP substrate and a stripe pattern was formed by photolithography, and then selective epitaxial growth was performed. Selective epitaxial layers thus obtained were found to have a photoluminescence half width of ∼40 meV at room temperature, which was comparable to the one reported by other workers in homoepitaxial metalorganic chemical vapor deposition growth of InP. The resistivity of the polycrystalline layer was ∼700 OHgr; cm at room temperature, which was four orders of magnitude larger than that of the selective epitaxial layer. Therefore, electrical isolation may be sufficient for fabrication of InP planar devices.
展开▼
