Application of ELA in Si Transistors

摘要

Effectiveness and its possibility of ELA (Excimer Laser Annealing) in advanced Si transistors are described. By reducing the process temperature and by improving the fabrication process as a LTPS (Low Temperature Poly-Si), FPD addressed by TFTs is expected to be mounted on flexible substrate/Extensive study is carried out to realize an advanced SoG (System on Glass). Mounting the functional devices on the insulating panels is expected using ELA. Although technical issues are remained for the fabrication process, Si TFTs formed by ELA enabling even 3D structure are expected as a functional Si system on insulator in the ubiquitous IT era.