Zn‐doped vapor‐grown InP

摘要

Zinc‐dopedp‐type InP layers has been grown by the In/PCl3/H2technique. It has been shown that the zinc atoms, incorporated during the growth, become electrically active after annealing. By photoluminescence study at 4.2 °K, it has been found that the main transition on the Zn level, in low‐doped material, was situated at 1.377 eV; this transition shifts to 1.382 eV in higher‐doped material.