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Influence of local heating on micro-Raman spectroscopy of silicon

机译:Influence of local heating on micro-Raman spectroscopy of silicon

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摘要

In micro-Raman spectroscopy strong local heating by the tightly focused laser beam results in an unexpectedly small temperature shift of the Raman peak. The experimental results of shift, broadening, and asymmetry are discussed in view of restricted thermal expansion and a temperature dependent Raman cross section. The Raman signal originates mostly in the wings of the beam profile, where the temperature is substantially lower than at the center. Consequently, the Raman peak shift cannot be used to estimate the maximal surface temperature: despite local melting in the center of the probed spot, the maximal detected shift is only about 2 cm~(-1), 10 times less than expected from the center temperature.

著录项

  • 来源
    《Journal of Applied Physics 》 |2003年第8期| 4946-4949| 共4页
  • 作者

  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类 应用物理学 ;
  • 关键词

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