Minority electron mobilities inp+hyphen;In0.53Ga0.47As have been measured with the zero field timehyphen;ofhyphen;flight technique. The roomhyphen;temperature (297 K) minority electron mobilities forp+hyphen;In0.53Ga0.47As doped 0.9 and 3.1times;1019cmminus;3are found to be 2900 and 3300 cm2thinsp;Vminus;1thinsp;sminus;1, respectively. These are the first measurements to demonstrate enhancement in minorityhyphen;carrier mobility as doping is increased for heavily doped In0.53Ga0.47As. This enhancement in mobility as doping is increased is similar to that observed inp+hyphen;GaAs, which has been attributed to reductions in plasmon and carrierndash;carrier scattering between minority electrons and majority holes.
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