Effect of interface structure on photoluminescence of InGaAs/GaAs pseudomorphic single quantum wells

摘要

Photoluminescence studies have been carried out on InGaAs pseudomorphic single quantum wells grown on GaAs by molecular beam epitaxy. Linewidths as narrow as 2.0 meV have been observed. The spectra typically consist of two peaks which on certain samples can be explained by intrawell thickness variations of one monolayer. On other samples the results are more consistent with exciton trapping at islands having a smaller lateral extent than the exciton Bohr radius.