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Third‐harmonic generation in an AlGaAs/AlAs superlattice

机译:AlGaAs/AlAs超晶格中的三次谐波产生

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Third‐harmonic generation in an AlGaAs/AlAs superlattice is observed for the first time at a pump‐light wavelength of around 2 mgr;m. The value of third‐order optical susceptibility khgr;(3), for the polarization parallel to the superlattice layer in a nonresonant region, is close to that reported for bulk GaAs. Enhancement of khgr;(3), giving more than three times the nonresonant value, is observed near a three‐photon resonance region. A characteristic third‐harmonic signal is observed when the pump‐light polarization has a component perpendicular to the superlattice layer. This is considered to be another khgr;(3)enhancement which is caused by nonparabolicity in the superlattice.
机译:在大约2 μm的泵浦光波长下,首次观察到AlGaAs/AlAs超晶格中的第三&连字符;谐波产生。对于非谐振区域中平行于超晶格层的偏振,三阶光磁化率&khgr;(3)的值接近于体砷化镓的报道值。在三连字符光子共振区域附近观察到&khgr;(3)的增强,给出了非共振值的三倍以上。当泵浦光偏振具有垂直于超晶格层的分量时,观察到特征性的三次谐波信号。这被认为是另一种&khgr;(3)增强,它是由超晶格中的非副曲线性引起的。

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