Compositional intermixing at CdS/Cu(In,Ga)Se-2 rough interface studied by x-ray fluorescence

摘要

The effects of compositional intermixing and high interfacial roughness in a series of CdS/Cu(In,Ga)Se-2 heterojunctions have been investigated using the technique of angular dependence of x-ray fluorescence. In the present case, the average interfacial roughness actually exceeds the nominal thickness of CdS film. A method of data analysis has been worked out to account for the large roughness and this technique allows a possibility of nondestructive determination of the concentration profile of both CdS and Cu(In,Ga)Se-2 as well as the effective roughness parameters in the system. (C) 2002 American Institute of Physics. References: 22