Carbon incorporation in InP grown by metalorganic chemical vapor deposition and application to InP/InGaAs heterojunction bipolar transistors

摘要

The incorporation of residual carbon has been studied for InP grown at low temperatures using TMIn and PH3by low‐pressure metalorganic chemical vapor deposition.n‐type conduction is observed with electron concentrations as high as 1×1018cm−3, and the electrical activation efficiency is 5–15. Carbon incorporation is found to be highly dependent on substrate temperature, suggesting that the rate‐limiting step is desorption of CHy(0≤y≤3) from the surface during growth. Hydrogen is also incorporated in the layers during growth. The electron mobilities are lower for C‐doped InP than for Si‐doped InP. InP/InGaAs heterojunction bipolar transistors with C as thep‐type base dopant and either Si or C as then‐type emitter dopant have been fabricated and compared. Devices with a carbon‐doped base and emitter showed degraded performance, likely as a result of deep levels incorporated during growth of the emitter.