Rapid construction of a phase diagram of doped Mott insulators with a composition-spread approach

摘要

We propose a method of rapid construction of a structural-magnetic-electronic phase diagram of doped Mott insulators. The composition-spread method is utilized for fabricating a film whose doping concentration varies from 0 to 1 continuously. The concurrent x-ray diffractometer that measures x-ray diffraction spectra of all the composition simultaneously, the scanning superconducting quantum interference device microscope, and the infrared optical spectroscopy are employed for characterizing the film. A demonstration is given for a colossal magnetoresistive material, La_(1-x)Sr_(x)MnO_(3).