Long and middle wavelength infrared photodiodes fabricated with Hg1−xCdxTe grown by molecular‐beam epitaxy

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机译：用分子连字符束外延生长的Hg1−xCdxTe制备的长波长和中波长红外光电二极管

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摘要

Long and middle wavelength infrared (LWIR, MWIR)p+‐nphotodiodes have been fabricated with Hg1−xCdxTe (0.20

机译：长波红外和中波红外（LWIR，MWIR）p+‐n光电二极管是用分子&连字符束外延（MBE）生长的Hg1−xCdxTe（0.20

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