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Electron impact excitation of the helium isoelectronic sequence

机译:Electron impact excitation of the helium isoelectronic sequence

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摘要

A simple analytic central potential with two adjustable parameters is proposed for the helium isoelectronic sequence. The potential parameters are obtained by appealing to the precise values of optical oscillator strengths calculated by Schiffetal. Using the Born approximation we calculate generalized oscillator strengths and integrated cross sections from threshold up to 5 keV for the electron impact excitation of the resonance transition 11Sndash;21Pin the helium isoelectronic sequence. The accuracy and the systematics of the results are discussed.

著录项

  • 来源
    《journal of applied physics》 |1981年第11期|6482-6483|共页
  • 作者

    P. S. Ganas;

  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
  • 关键词

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