Mass spectrometric study of the reaction of photohyphen;oxidized GaAs with Ga

摘要

The Gahyphen;induced reaction of photohyphen;oxidized GaAs, which is used as a mask material for theinsituselectivehyphen;area growth of GaAs, has been studied by mass spectrometry. An anomalous behavior of photohyphen;oxidized GaAs was observed by measuring the temperaturehyphen;programmed desorption after Ga predeposition and the desorption response to pulsed Ga injection onto it. Deposited Ga, less than 3 monolayers, did not directly deoxidize the photohyphen;oxidized GaAs into a volatile product, but, on the contrary, stabilized it. This anomalous behavior was not observed for darkhyphen;oxidized GaAs. It is considered that Gahyphen;induced stabilization of the oxide makes the photohyphen;oxidized GaAs more effective as a mask for selectivehyphen;area growth.