Effect of electron‐hole interaction on the Auger recombination process in a semiconductor

摘要

The effect of the electron‐hole interaction on the Auger recombination process in a semiconductor is discussed. Using a simplified treatment based on an excitonic picture, a theory for an excess carrier lifetime is developed. The calculation is done for ann‐type material with direct band gap, taking account of both nondegenerate and weakly degenerate statistics. The result is compared with the experimental data onn‐type InAs. It is shown that both the electron‐hole interaction and the statistical degeneracy have an important effect on the temperature dependence of the Auger recombination lifetime of excess carriers.