We have shown that highhyphen;purity Cu films can be deposited on the Si substrate at room temperature in a conventional vacuum condition using the partially ionized beam technique. The beam contains about 2percnt; of Cu selfhyphen;ions and a bias potential of 1 kV is applied to the substrate during deposition. By using the secondary ion mass spectrometry technique we show that the Cu/Si interface is free of contaminants such as oxygen, carbon, and hydrogen, despite the fact that noinsitusurface cleaning has been performed on the substrate prior to deposition. These phenomena are attributed to the selfhyphen;cleaning effect induced by the energetic Cu ions bombardment during deposition.
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