Oxidation of silicon: Is there a slow interface reaction?

摘要

Chemical analysis of the surface of an oxidized silicon‐germanium mixture by Rutherford backscattering reported recently showed that the silicon is oxidized, but not the germanium. This result provides evidence that the effective oxygen concentration at the silica‐silicon interface is low, which is contrary to a slow interface reaction. Strain in the oxide film can result in linear‐parabolic oxidation kinetics without a slow interface reaction.