Inverted basehyphen;collector tunnel transistors

摘要

Two novel threehyphen;terminal devices based on tunneling in quantum well and quantum barrier heterostructures are proposed and analyzed theoretically. In both devices, the relative positions of the base and collector are interchanged from conventional emitterhyphen;basehyphen;collector sequence. This provides a means for obtaining negligible base currents and large current transfer ratios. In both cases, a base voltage controls the emitterhyphen;collector tunneling current by shifting the resonances in a quantum well. Calculations indicate that significant variations in the emitterhyphen;collector currenthyphen;voltage characteristics can be obtained for reasonable basehyphen;emitter voltages. We call the two devices a Stark effect transistor and a negative resistance Stark effect transistor, respectively.