Non-volatile Memory Fabricated with Al Nanocrystals Embedded in Conductive-Low-Molecular-Organic Layers

摘要

We fabricated non-volatile memories with α-NPD and Alq{sub}3, which are conductive-low-molecular organic material. I{sub}(on)/I{sub}(off) ratio for both materials was ～ 10{sup}2, however, the endurance cycles of non-volatile memories with α-NPD and Alq{sub}3 were 10{sup}5 and 10{sup}2, respectively. Although the conductive characteristics of α-NPD and Alq{sub}3 are different from each other, they showed similar I-V characteristics producing a bi-stable electrical characteristics and negative differential resistance.