Photoluminescence study of confined electron hole plasma in GaxIn1minus;xAs heterostructures

摘要

A lowhyphen;energy photoluminescence (PL) emission is observed in GaxIn1minus;xAs heterostructures. The emission originates from an electronhyphen;hole plasma (EHP) confined in a 500 Aring; GayIn1minus;yAs layer between the InP substrate and a wider band gap GaxIn1minus;xAs layer. A linehyphen;shape analysis of the EHP emission yields electronic temperatures which essentially coincide with the bath temperature. Linear polarization of the PL was observed which indicates a degree of strain in the confining layer. Studies in a magnetic field indicate that the carrier transport in the heterostructure studied is via free carriers and not via excitons.