Synthesis of yttrium oxide thin films with and without the use of organic self-assembled monolayers

摘要

Thin Y-containing films have been deposited at 80℃ from aqueous solutions of YNO↓(3)·5H↓(2)O and urea on bare single crystal Si wafers, and on Si wafers coated with sulfonate-functionalized organic self-assembled monolayers. The as-deposited films are believed to be an amorphous yttrium basic carbonate and can be completely transformed at 600℃ in air to crystalline Y↓(2)O↓(3). Capacitance-voltage measurements on these films showed good dielectric properties, with a relative permitivity of 18, more than a factor of four higher than that of SiO↓(2). # 1997 American Institute of Physics. S0003-6951 (97)01633-1