A physics‐based bipolar transistor model for low‐temperature circuit simulation

摘要

A comprehensive bipolar transistor model based on the Gummel–Poon model Bell Syst. Tech. J.49, 827 (1970) for low‐temperature circuit simulation is presented. Relevant low‐temperature physics such as doping‐dependent dielectric permittivity, temperature‐dependent free‐carrier mobility and intrinsic carrier density, and de‐ionization of impurity dopants are included in the model. Consequently, the model does not require temperature fitting parameters as does the Gummel–Poon model. Comparisons of the present model with the Gummel–Poon model, with experimental data, and with simulation from a two‐dimensional device simulator (pisces) are included.