We present a study of internal field distributions in strained InGaAs/GaAs multiple quantum wells inphyphen;ihyphen;nstructures grown on (111)Bhyphen;oriented GaAs. Room temperature photocurrent spectroscopy shows clear blueshifting of the e1hyphen;hh1 transition as the well fields are reduced by external bias. The relative length of total well to total barrier material is shown to be an important factor in determining the well and barrier fields. We demonstrate a photocurrent contrast ratio of 4.5:1 for only 3 V applied bias across a 25 quantum well In0.13Ga0.87Asphyphen;ihyphen;ndiode and discuss the implication of our results to the design of high performance electrohyphen;optic modulators and self electrohyphen;optic effect devices in this material system.
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