Stopping cross sections for 0.3-2.5 MeV protons in GaN and InP

摘要

The stopping cross sections of the III-V semiconductor materials GaN and InP for 0.3-2.5 MeV ~(1)H have been studied by the Rutherford backscattering technique. The data are given with an estimated uncertainty better than 2 and the agreement with earlier data existing for InP below 500 keV is good. A commonly used model ZBL-85 predicts the data correctly at the high energy end of our energy interval, but overestimates the stopping values by 7 and 4 for GaN and InP, respectively, at the lower energies.