Resonant tunneling bipolar transistors using InAlAs/InGaAs heterostructures

摘要

Resonant tunneling bipolar transistors (RBTs) using InAlAs/InGaAs heterostructures were fabricated. These devices are bipolar transistors which use a resonant tunneling barrier as a minorityhyphen;carrier injector. The RBT exhibits a collector current peak as a function of the basehyphen;emitter voltage at room temperature. The peakhyphen;tohyphen;valley ratio of the collector current is 3.5, and the peak collector current density is 5.7times;104A/cm2. The commonhyphen;emitter current gain reaches a value of 24. These InAlAs/InGaAs RBTs characteristics are much better than those of AlGaAs/GaAs RBTs. We measured the microwave characteristics of the InAlAs/InGaAs RBT at room temperature, and obtained a cutoff frequency of 12.4 GHz. An equivalent circuit analysis and device simulation yielded an estimated resonant tunneling barrier response time of 1.4 ps.