The Dependence of Remaining Carbon in the Electrical Property of the Gate Insulator Film on SiC at Low Temperature Insulator Formation

摘要

This paper investigated the influence on the electrical property of remaining carbon in the insulator film of MOS structure on 4H-SiC. The insulator films were formed by PECVD and radical oxynitridation using microwave-excited high-density plasma with NO gas. The oxide fixed charge and the interface trap density can be dramatically reduced by NO gas radical oxynitridation after oxide film formed by PECVD compared with by direct oxynitridation on 4H-SiC. It is confirmed that the electrical property is improved as the decrease of remaining carbon in the insulator film.