Twohyphen;dimensional timehyphen;dependent analysis was carried out for the switching of a thyristor by solving diffusion equations for minorityhyphen;carrier distributions with realistic boundary conditions and device geometry considered. By using the technique of Laplace transform, the solutions were obtained in closed form and calculated numerically. Twohyphen;dimensional current density distributions within an interdigitated thyristor were calculated and plotted for various times during the process of rsquo;rsquo;turnhyphen;onrsquo;rsquo;. An optoelectronic system was constructed to map device thermal profile by taking infrared absorption measurements. Correlation between current density distribution calculated and thermal profile measured were investigated and found useful as a justification of this analysis.
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