Photoconductivity in AgInSe2

摘要

Photoconductivity spectra for AgInSe2samples have been obtained which correlate reasonably well with the known band structure. Carrier lifetimes of greater than 1 msec for excitation near 1 mgr; have been obtained. Infrared quenching of the photoconductivity yields a center with a binding energy of 0.5 eV.