Exoelectron analysis of amorphous silicon

摘要

The basic aim of the present article is proposing a new field in the study of structural imperfections in amorphous silicon, particularly in thea‐Si:H system. The method is based on registering photothermostimulated exoelectron emission (PTSE). The PTSE method is brought into effect as a near‐threshold single‐photon photoemission process. Its quantum yield is modulated by change in the density of states created by point defects, such asDcenters. It is shown that exoelectron spectroscopy makes it possible to investigate heat‐ and light‐modified changes in the electronic structure of the defects, their annealing, as well as diffusion of atomic particles, such as hydrogen.