Spontaneous growth of an InAs nanowire lattice in an InAs/GaSb superlattice

摘要

We describe a lattice of InAs nanowires that spontaneously organizes in three dimensions within an InAs/GaSb superlattice grown under high As-4 flux. As characterized by x-ray diffraction and cross-sectional scanning tunneling microscopy, the periodic nanowires are similar to10 nm high, 120 nm wide, and many microns long along 110, with face-centered cubic-like vertical ordering within the superlattice. The unusual vertical ordering creates a lateral composition modulation with half the period of the nanowires. The structure appears to arise from the InAs misfit stress combined with specific InAs and GaSb growth kinetic effects. (C) 2002 American Institute of Physics. References: 13