Using a new method based on hothyphen;electron generation, bandhyphen;tohyphen;band Auger recombination inn+silicon is studied experimentally. Using the theory developed in Part I, a conservative analysis demonstrates that this Auger recombination is limited to an electron Auger coefficient smaller than 5times;10minus;32cm6/sec which is in disagreement with some earlier studies reportingCn=2.8times;10minus;31cm6/sec.
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