Lowhyphen;temperature cadmium telluride homoepitaxy at high growth rates

摘要

Homoepitaxy of CdTe using ultraviolet photonhyphen;assisted metalorganic vaporhyphen;phase epitaxy has been investigated at 250thinsp;deg;C with dimethylcadmium and diethyltellurium as the precursor gases. Empirical relationships between film properties and the deposition parameters at high growth rates ( 4 mgr;m/h) are examined.