Ultra thin buried Si↓(1-x)C↓(x) films (δ layers) of monolayer thickness and high carbon concentration (x＞0.1) in a Si matrix have been prepared by molecular beam epitaxy and were structurally characterized by high resolution x-ray diffraction, i.e., measurements of crystal truncation rods. The average interface roughness of the 8 layers is in the order of 6-10(A), A larger carbon deposit results in the formation of thicker Si↓(1-x)C↓(x) δlayers with lower carbon concentrations and smoother interfaces. This effect is attributed to a reduction of the strain in the 8 layer due to the lower carbon concentration. # 1997 American Institute of Physics. S0003-6951 (97)00150-2
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