Strain effects in InSbp+/ndiodes and metalhyphen;insulatorhyphen;semiconductor devices

摘要

An InSb metalhyphen;insulatorhyphen;semiconductor device has been used to investigate the influence of external strain on the shift of theIhyphen;Vcharacteristics of an InSb diode. Measured flatband voltage change ofChyphen;Vcharacteristics and calculated gate voltage increment owing to stresses have been compared. A simple estimate of external strain of the beam deflection was described. The relationships between external strain and short current, dynamic resistance and open circuit voltage have been shown. A brief discussion of effects in InSbIhyphen;Vcharacteristics is given.