Isothermal annealing of electronhyphen;irradiated Czochralski silicon has been studied at four different temperatures ranging from 304 to 350thinsp;deg;C using infrared spectroscopy. At annealing temperatures above 300thinsp;deg;C the irradiationhyphen;induced band at 830 cmminus;1, usually attributed to a vacancyhyphen;oxygen complex (theAcenter), disappears and a new band at 889 cmminus;1grows up. Within the experimental accuracy , the activation energy for the growth of this band is found to be identical with the value given by Stavolaetal. for lsquo;lsquo;anomalousrsquo;rsquo; oxygen diffusion in silicon. Also the frequency factors for the two processes are in reasonable agreement. Our results show that a vacancyhyphen;assisted process may provide an explanation for enhanced motion of oxygen in silicon.
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