Hydrogen ion motion in amorphous silicon solar cells at elevated temperatures

摘要

Electric fieldhyphen;enhanced degradation has been observed in amorphous silicon solar cells exposed to intense illumination (45ndash;60 suns) at elevated temperatures (gsim;160thinsp;deg;C). The front tin oxide contacts of bothpndash;indash;nandnndash;indash;pcells darken significantly when a strong reverse bias is applied at elevated temperatures and under intense illumination. Compositional profiles of the cells show that a strong reverse bias causes a depletion of hydrogen near the contacts. These results are interpreted in terms of proton motion near thep/iinterface ofpndash;indash;ncells and negative hydrogen ion motion near thei/ninterface. copy;1996 American Institute of Physics.