Very-low-operating-voltage organic light-emitting diodes using a p-doped amorphous hole injection layer

摘要

We demonstrate the use of a p-doped amorphous starburst amine, 4, 4′, 4″-tris(N, N-diphenyl-amino)triphenylamine (TDATA), doped with a very strong acceptor, tetrafluoro-tetracyano-quinodimethane by controlled coevaporation as an excellent hole injection material for organic light-emitting diodes (OLED's). Multilayered OLEDs consisting of double hole transport layers of p-doped TDATA and triphenyl-diamine, and an emitting layer of pure 8-tris-hydroxyquinoline aluminum exhibit a very low operating voltage (3.4 V) for obtaining 100 cd/m~(2) even for a comparatively large (110 nm) total hole transport layer thickness.