Sn incorporation and electron concentration in vaporhyphen;phase epitaxially grown GaAs

摘要

The total Sn concentration of Snhyphen;doped vaporhyphen;phase epitaxially grown GaAs layers (dopant range 1017ndash;1019cmminus;3) was determined by secondaryhyphen;ion mass spectrometry. Within experimental error these concentrations are equal to the electron densities obtained from Hall measurements on the same samples. This result indicates that, in contrast to earlier conclusions, Sn doping does not introduce any significant degree of compensation. The upper limit of the acceptor concentration compared to that of the donors is established to be 8percnt;. The importance of this finding for GaAs films with donorhyphen;type dopants is discussed.