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首页> 外文期刊>電子情報通信学会技術研究報告. マイクロ波·ミリ波フォトニクス >Single-Mode Operation of GaAsP Ring / Fabry-Perot Composite Cavity Semiconductor Lasers
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Single-Mode Operation of GaAsP Ring / Fabry-Perot Composite Cavity Semiconductor Lasers

机译:Single-Mode Operation of GaAsP Ring / Fabry-Perot Composite Cavity Semiconductor Lasers

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摘要

We designed and fabricated ring / Fabry-Perot composite cavity semiconductor lasers. Single mode lasing under CW operation was accomplished. The threshold current was 140 mA, and an output power of 12 mW was obtained at an injection current of 250 mA. A side mode suppression ratio (SMSR) higher than 25 dB was also obtained. The temperature coefficient of the lasing wavelength of 0.23 nm/K was explained by considering the temperature coefficient of the band gap energy of the quantum well.

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