Influence of transverse electric field on the photoluminescence linewidth of excitonic transition in quantum wells: Alloy disorder and composition fluctuation contributions

摘要

The influence of transverse electric field on the photoluminescence linewidth of excitonic transition in a semiconductor quantum well structure is examined within a theoretical model which ascribes the origin of the linewidth to bandhyphen;edge discontinuity fluctuations arising from local compositional fluctuations at the interfaces, and to shorthyphen;ranged alloy disorder scattering. In particular, the model is applied to the AlxGa1minus;xAs/GaAs system and the dependence of linewidth on the width of the quantum well, the average composition of the alloy, the amplitude of composition fluctuation, and the value of applied field (0ndash;100 kV/cm) is studied.