A new technique to determine the depth distribution of energy loss, the so‐called depth‐dose function, is described for electrons whose energies ranged from 15 to 30 keV at normal and 45° incident angles. This method is based on a series of measurements of currents induced by the penetration of energetic electrons through a metal‐oxide‐semiconductor‐structure (Alsngbnd;SiO2sngbnd;Si) specimen whose metal electrode is formed by an aluminum layer deposited in a stepwise manner. The experimental depth‐dose function and range‐energy relation are compared with other experimental and theoretical results. A particular interest was taken in the comparison of the experimental results with those predicted by our Monte Carlo calculations to confirm the good agreement between them. Furthermore, the ratio of the product of mobility and lifetime to the mean electron excitation energy in SiO2was also determined to be mgr;tgr;/EA= 0.10 × 10−11cm/V2, which may be ranked between the values reported by Everhart and Hoff and by Goodman. The effects of space charge in SiO2are also discussed.
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